The impact of high-voltage drift N-well and shallow trench isolation layouts on electrical characteristics of LDMOSFETs

C. T. Huang, Bing-Yue Tsui, Hsu Ju Liu, Geeng Lih Lin

研究成果: Conference contribution同行評審

5 引文 斯高帕斯(Scopus)

摘要

The impact of the high-voltage drift n-well (HVNW) and shallow trench isolation (STI) regions on the electrical characteristics of 32V symmetry and asymmetry n-channel laterally diffused drain MOSFET (N-LDMOS) were evaluated. Asymmetry structure has higher threshold voltage owing to the transient enhancement diffusion (TED) of boron near source region. The smaller extension of the HVNW to STI (E HVNW-STI ) for asymmetry structure exhibits a wider safe-operating-area (SOA) from the hot-carrier reliability point of view. To obtain a higher on-current, the E HVNW-STI should be optimized because the steep sidewall of the STI may force current to flow through a longer distance in the HVNW. Finally, increase of EHVNW-STI cannot efficiently increase breakdown voltage.

原文English
主出版物標題IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
頁面267-270
頁數4
DOIs
出版狀態Published - 1 十二月 2007
事件IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan
持續時間: 20 十二月 200722 十二月 2007

出版系列

名字IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Conference

ConferenceIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
國家Taiwan
城市Tainan
期間20/12/0722/12/07

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