The growth mechanism of micron-size V defects on the hydride vapor phase epitaxy grown undoped GaN films

Pei Yen Lin, Yew-Chuhg Wu*

*Corresponding author for this work

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

Micron-size V defects were found on the hydride vapor phase epitaxy grown GaN films. When the film thickness increased, the diameter of V defects increased, but the density of the defects decreased. The defect has six {1 1̄ 0 1} facets, which encircle to form a concave hexagonal pyramid. Its shape is similar to that of epitaxial lateral overgrowth (ELO) GaN crystal grown on a dot-patterned GaN underlying layer. Through the analysis of the growth mechanism of ELO GaN, the growth mechanism of the V defects was investigated.

原文English
頁(從 - 到)397-400
頁數4
期刊Materials Chemistry and Physics
80
發行號2
DOIs
出版狀態Published - 26 五月 2003

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