The Enhancement of Gate-Induced-Drain-Leakage (GIDL) Current in Short-Channel SOI MOSFET and its Application in Measuring Lateral Bipolar Current Gain β

Jian Chen, Fariborz Assaderaghi, Ping Keung Ko, Chen-Ming Hu

研究成果: Article

67 引文 斯高帕斯(Scopus)

摘要

A new off-state leakage current unique for short-channel SOI MOSFET’s is reported. This off-state leakage is the amplification of gate-induced-drain-leakage (GIDL) current by the lateral bipolar transistor in a SOI device due to the floating body. The leakage current can be enhanced by as much as 100 times for l/4-μm SOI devices. This can pose severe constraints in future 0.1-μm SOI device design. A novel technique was developed based on this mechanism to measure the lateral bipolar transistor current gain β of SOI devices without using a body contact.

原文English
頁(從 - 到)572-574
頁數3
期刊IEEE Electron Device Letters
13
發行號11
DOIs
出版狀態Published - 1 一月 1992

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