A complete study on the effects of indium channel implant energy on transistor characteristics including carder mobility, drain current, drain induce barrier lowering (DIBL), device breakdown, junction leakage, impact ionization rate and hot-carrier degradation were performed on 0.1 μm devices. It was found that devices with super-steep-retrograde (SSR) indium channel profile depict higher transconductance in linear region, albeit the saturation drive current is lower, compared to the conventional BF2-doped control. In addition, In-doped devices also depict improved DIBL, Ion-Ioff current ratio and transistor breakdown voltage. Finally, by increasing the indium implant energy, devices depict an improved transconductance, reduced DIBL and hot-carrier degradation, while suffering larger junction leakage and capacitance.
|頁（從 - 到）||75-79|
|期刊||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版狀態||Published - 1 一月 2001|