The effects of super-steep-retrograde indium channel profile on deep submicron n-channel metal-oxide-semiconductor field-effect transistor

Coming Chen, Sun Jay Chang, Jih Wen Chou, Tony Lin, Wen Kuan Yeh, Chun Yen Chang, Wen Zheng Luo, Yao Jen Lee, Tien-Sheng Chao, Tiao Yuan Huang

研究成果: Article同行評審

摘要

A complete study on the effects of indium channel implant energy on transistor characteristics including carder mobility, drain current, drain induce barrier lowering (DIBL), device breakdown, junction leakage, impact ionization rate and hot-carrier degradation were performed on 0.1 μm devices. It was found that devices with super-steep-retrograde (SSR) indium channel profile depict higher transconductance in linear region, albeit the saturation drive current is lower, compared to the conventional BF2-doped control. In addition, In-doped devices also depict improved DIBL, Ion-Ioff current ratio and transistor breakdown voltage. Finally, by increasing the indium implant energy, devices depict an improved transconductance, reduced DIBL and hot-carrier degradation, while suffering larger junction leakage and capacitance.

原文English
頁(從 - 到)75-79
頁數5
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
40
發行號1
DOIs
出版狀態Published - 1 一月 2001

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