The effect of the growth temperature on polyoxide by rapid thermal processing

Kow-Ming Chang, Cheang Lee Tzyh Cheang Lee, Long Sun Yong Long Sun

研究成果: Article同行評審

摘要

A rapid thermal oxynitridation process using N2O gas as the oxidant has been developed. Due to a smoother polyoxide/polysilicon interface, polyoxide grown by rapid thermal processing has better reliability than that of polyoxide grown by a conventional furnace. Moreover, in order to explore the effects of growth temperature on polyoxides, polyoxides were grown at different temperatures in this study. From this work, we find that polyoxide grown at low temperatures has better reliability than polyoxides grown at high temperature and exhibits improved characteristics such as higher breakdown electric field, less gate voltage shift, and larger charger-to-breakdown.

原文English
頁(從 - 到)1157-1161
頁數5
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
40
發行號3 A
DOIs
出版狀態Published - 1 三月 2001

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