The effect of pulsed laser annealing on the nickel silicide formation

Hou Yu Chen*, Chia Yi Lin, Chien Chao Huang, Chao-Hsin Chien

*Corresponding author for this work

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

The pulsed laser annealing (PLA) is used to assist nickel silicide transformation for Schottky barrier height reduction and tensile strain enhancement and the effect of different laser power are investigated. In this report, a two-step annealing process which combine the conventional rapid thermal annealing with pulsed laser annealing is proposed to achieve a smooth silicon-rich NiSi x interfacial layer on (1 0 0) silicon. With optimized laser energy, a 0.2 eV Schottky barrier height (SBH) modulation is observed from Schottky diode electrical characterization. Furthermore, PLA provides sufficient effective temperature during silicidation which also lead to increased tensile stress of silicide film than the two-step RTA silicide is also investigated. The SBH modulation and tensile stress enhancement benefits of PLA silicidation are considered as an alternative to the conventional rapid thermal annealing for ultra-scaled devices performance enhancement.

原文English
頁(從 - 到)2540-2543
頁數4
期刊Microelectronic Engineering
87
發行號12
DOIs
出版狀態Published - 1 一月 2010

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