The effect of Os interlayers on the thermal stability of magnetic CoFe/OsMn films

Tai Yen Peng*, C. K. Lo, San-Yuan Chen, Y. D. Yao

*Corresponding author for this work

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

The thermal stability of a multilayer structure of protection layer/Co90Fe10/Os (d nm)/Os20Mn80 has been studied as functions of annealing temperature (Tan) and thickness of Osmium (Os) layer. The insertion of a thin Os layer between the Co90Fe10/Os20Mn80 interface shows better thermal stability. No diffusion evidence was found for samples with d ≧ 0.3 nm as examined by Auger electron spectroscopy depth profile at different annealing temperatures up to 400 °C. These samples with Os layer showed the same magnetic behavior and the hysteresis loop with squareness (S) larger than 0.9 were observed before and after annealing.

原文English
期刊Journal of Magnetism and Magnetic Materials
304
發行號1
DOIs
出版狀態Published - 1 九月 2006

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