## 摘要

We have studied the bias-temperature instability of three-dimensional self-aligned metal-gate/high-Κ/Germanium-on-insulator (GOI) CMOSFETs, which were integrated on underlying 0.18 μm CMOSFETs. The devices used IrO_{2}-IrO_{2}-Hf dual gates and a high-Κ LaAiO_{3} gate dielectric, and gave an equivalent-oxide thickness (EOT) of 1.4 mn. The metal-gate/high-Κ/GOI p-and n-MOSFETs displayed threshold voltage (V^{t}) shifts of 30 and 21 mV after 10 MV/cm, 85 °C stress for 1 h, comparable with values for the control two-dimensional (2-D) metal-gate/high-Κ-Si CMOSFETs. An extrapolated maximum voltage of - 1.2 and 1.4 V for a ten-year lifetime was obtained from the bias-temperature stress measurements on the GOI CMOSFETs.

原文 | English |
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頁（從 - 到） | 407-409 |

頁數 | 3 |

期刊 | IEEE Electron Device Letters |

卷 | 26 |

發行號 | 6 |

DOIs | |

出版狀態 | Published - 1 六月 2005 |