The effect of H 2 treatment on heterojunction with intrinsic thin layer (HIT) solar cell perfromance using 40.68MHz VHF-PECVD system

Man Chi Huang*, Chia Hua Chang, Fang Ming Li, Ching Hsiang Hsu, Binh Tinh Tran, S. S. Tang, Kung Liang Lin, Yueh Chin Lin, Fu Ching Tung, Muh Wang Liang, Edward Yi Chang

*Corresponding author for this work

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

In this report, we studied the fabrication of heterojunction with intrinsic thin layer (HIT) solar cell, which was deposited by using very high frequency chemical vapor deposition (VHF-PECVD), at a high deposition rate under a low process temperature. The HIT solar cell has a very thin emitter layer on the light-incident surface (about 10nm) and the contact region was passivated by hydrogen (H2) plasma treatment to improve solar cell performance. With the passivation, the carrier transport may be enhanced and the extraction of photo current may also be increased. These features can make the Si-bulk absorbs more photons and extract more photo-electric current [1].

原文English
主出版物標題Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
頁面3001-3004
頁數4
DOIs
出版狀態Published - 1 十二月 2011
事件37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States
持續時間: 19 六月 201124 六月 2011

出版系列

名字Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN(列印)0160-8371

Conference

Conference37th IEEE Photovoltaic Specialists Conference, PVSC 2011
國家United States
城市Seattle, WA
期間19/06/1124/06/11

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