The direct insulator-quantum Hall transition

Chi Te Liang, Shun-Tsung Lo

研究成果: Article同行評審

摘要

The direct insulator-quantum Hall (I-QH) transition corresponds to a transition from an insulator to a high Landau-level-filling factor v > 2 QH state, which is characterized by an approximately temperature T-independent longitudinal resistance of a few nm thick electron (or hole) layer. In this paper, we review both the experimental and theoretical results on the direct I-QH transition. In particular, we attempt to address several interesting yet unsettled issues in the field of the direct I-Q transition. We suggest that further studies are required for obtaining a thorough understanding of the direct I-QH transition observed in nano-scale charge layers.

原文English
頁(從 - 到)1175-1193
頁數19
期刊Chinese Journal of Physics
52
發行號4
DOIs
出版狀態Published - 1 一月 2014

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