The deterioration of a-IGZO TFTs owing to the copper diffusion after the process of the sourcedrain metal formation

Ya-Hsiang Tai*, Hao Lin Chiu, Lu Sheng Chou

*Corresponding author for this work

研究成果: Article

66 引文 斯高帕斯(Scopus)

摘要

In this work, the influence of copper on amorphous type Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistors (TFTs) transfer curve is studied. The I D-V G curves of a-IGZO TFTs with sourcedrain in the structures of Cu/Ti and Ti/Al/Ti are compared. The results show that the copper greatly deteriorates the performance of the TFTs. The presence of the copper in the channel region of the device is verified by SIMS analysis. A Cu-dipping experiment is conducted by dipping devices into the solution of CuSO 4 to confirm the role of copper in the deterioration of the I D-V G curves. The hypothesis is also verified through ATLAS device simulator.

原文English
期刊Journal of the Electrochemical Society
159
發行號5
DOIs
出版狀態Published - 9 四月 2012

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