The Design of CMOS 13.56-MHz High Efficiency 1×/3× 1.99V/6.29V Active Rectifier for Implantable Neuromodulation Systems

Sung Hao Wang, Yueh Hsuan Lee, Xin Hong Qian, Chung-Yu Wu

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

A 13.56MHz high efficiency CMOS 1X/3X active rectifier with a novel active triple-voltage(3X) rectifier is proposed and verified. The proposed rectifier is specially designed for medical implant systems. It provides 1X/3X dual output voltage (1.99V and 6.29V) allowing the implantable neuromodulation system to operate with high power conversion efficiency (PCE) while stimulating simultaneously. A start-up control circuit is also added to achieve robust start-up mechanism. On-chip delay compensation control is implemented to increase the conduction time, avoid reverse current, and enhance the efficiency. In addition, the rectifier can sustain a higher input inductive voltage without the overstress problem by adding cascode power transistors. The measured dual output voltages of the 1X/3X rectifier are 1.99V and 6.29V while the input inductive voltage is 2.75V. The proposed rectifier achieves 84.2% in PCE with total 57mW output power under 13.56 MHz operation frequency. Based on its capability to provide large output voltage for stimulation with high PCE, the proposed 1X/3X active rectifier is suitable for implantable neuro-modulation systems.

原文English
主出版物標題2018 IEEE International Symposium on Circuits and Systems, ISCAS 2018 - Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781538648810
DOIs
出版狀態Published - 26 四月 2018
事件2018 IEEE International Symposium on Circuits and Systems, ISCAS 2018 - Florence, Italy
持續時間: 27 五月 201830 五月 2018

出版系列

名字Proceedings - IEEE International Symposium on Circuits and Systems
2018-May
ISSN(列印)0271-4310

Conference

Conference2018 IEEE International Symposium on Circuits and Systems, ISCAS 2018
國家Italy
城市Florence
期間27/05/1830/05/18

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