The curious case of exploding quantum dots: Anomalous migration and growth behaviors of Ge under Si oxidation

Ching Chi Wang, Po Hsiang Liao, Ming Hao Kuo, Tom George, Pei-Wen Li*

*Corresponding author for this work

研究成果: Article同行評審

11 引文 斯高帕斯(Scopus)

摘要

We have previously demonstrated the unique migration behavior of Ge quantum dots (QDs) through Si3N4 layers during high-temperature oxidation. Penetration of these QDs into the underlying Si substrate however, leads to a completely different behavior: the Ge QDs 'explode,' regressing back almost to their origins as individual Ge nuclei as formed during the oxidation of the original nanopatterned SiGe structures used for their generation. A kineticsbased model is proposed to explain the anomalous migration behavior and morphology changes of the Ge QDs based on the Si flux generated during the oxidation of Si-containing layers.

原文English
頁(從 - 到)1-6
頁數6
期刊Nanoscale Research Letters
8
發行號1
DOIs
出版狀態Published - 14 六月 2013

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