The cooling effect on structural, electrical, and optical properties of epitaxial a-plane ZnO:Al on r-plane sapphire grown by pulsed laser deposition

Chun Yen Peng, Yuan An Liu, Wei Lin Wang, Jr Sheng Tian, Li Chang*

*Corresponding author for this work

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

Here, the unambiguous effect of cooling rate on structural, electrical, and optical properties of a-plane ZnO:Al on r-plane sapphire grown by pulsed laser deposition at 700 °C is reported. A high cooling rate (∼100 °C/min) can result in stripe morphology along m-direction and significant deformation on the epitaxial films of a-plane ZnO:Al with deteriorated crystallinity and significantly lowered resistivity. Also, photoluminescence spectra exhibit high intensities of excess violet and green emissions with low intensity of near band edge luminescence. Comparison with pure a-plane ZnO films is also presented.

原文English
文章編號151907
頁數4
期刊Applied Physics Letters
101
發行號15
DOIs
出版狀態Published - 8 十月 2012

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