The negative differential resistance (NDR) characteristics of GaSb/AlSb/GaSb/AlSb/InAs doublebarrier structure were improved by incorporating an InAs blocking layer into the well region, i.e. GaSb/AlSb/InAs/GaSb/AlSb/InAs structure. The multiple NDR behaviors as well as high peak-to-valley ratios (PVRs) were observed with appropriate InAs well width. The three-band model was used to investigate the effect of the InAs well on the current-voltage characteristics of GaSb/AlSb/InAs/GaSb/AlSb/InAs structures.
|出版狀態||Published - 1 一月 1994|
|事件||1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan|
持續時間: 12 七月 1994 → 15 七月 1994
|Conference||1994 International Electron Devices and Materials Symposium, EDMS 1994|
|期間||12/07/94 → 15/07/94|