The carrier transport in the GaSb/AlSb/InAs/GaSb/AlSb/InAs resonant interband tunneling structures

M. H. Liu, Y. H. Wang, M. P. Houng, Jenn-Fang Chen, A. Y. Cho

研究成果: Paper

摘要

The negative differential resistance (NDR) characteristics of GaSb/AlSb/GaSb/AlSb/InAs doublebarrier structure were improved by incorporating an InAs blocking layer into the well region, i.e. GaSb/AlSb/InAs/GaSb/AlSb/InAs structure. The multiple NDR behaviors as well as high peak-to-valley ratios (PVRs) were observed with appropriate InAs well width. The three-band model was used to investigate the effect of the InAs well on the current-voltage characteristics of GaSb/AlSb/InAs/GaSb/AlSb/InAs structures.

原文English
DOIs
出版狀態Published - 1 一月 1994
事件1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan
持續時間: 12 七月 199415 七月 1994

Conference

Conference1994 International Electron Devices and Materials Symposium, EDMS 1994
國家Taiwan
城市Hsinchu
期間12/07/9415/07/94

指紋 深入研究「The carrier transport in the GaSb/AlSb/InAs/GaSb/AlSb/InAs resonant interband tunneling structures」主題。共同形成了獨特的指紋。

  • 引用此

    Liu, M. H., Wang, Y. H., Houng, M. P., Chen, J-F., & Cho, A. Y. (1994). The carrier transport in the GaSb/AlSb/InAs/GaSb/AlSb/InAs resonant interband tunneling structures. 論文發表於 1994 International Electron Devices and Materials Symposium, EDMS 1994, Hsinchu, Taiwan. https://doi.org/10.1109/EDMS.1994.771157