The annihilation of threading dislocations in the germanium epitaxially grown within the silicon nanoscale trenches

Guang Li Luo*, Shih Chiang Huang, Chih Hsin Ko, Clement H. Wann, Cheng Ting Chung, Zong You Han, Chao Ching Cheng, Chun Yen Chang, Hau Yu Lin, Chao-Hsin Chien

*Corresponding author for this work

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

We investigated the selective growth of germanium into nanoscale trenches on silicon substrates. These nanoscale trenches, the smallest size of which was 50 nm, were fabricated using the state-of-the-art shallow trench isolation technique. The quality of the Ge films was evaluated using transmission electron microscopy. The formation of threading dislocations (TDs) was effectively suppressed when using this deposition technique. For the Ge grown in nanoscale Si areas (e.g., several tens of nanometers), the TDs were probably readily removed during cyclic thermal annealing predominantly because their gliding distance to the SiO2 sidewalls was very short. Therefore, nanoscale epitaxial growth technology can be used to deposit Ge films on lattice-mismatched Si substrates with a reduced defect density.

原文English
期刊Journal of the Electrochemical Society
156
發行號9
DOIs
出版狀態Published - 7 八月 2009

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