Terahertz emission of magnesium doped indium nitride

Y. J. Yeh*, Hyeyoung Ahn, Y. L. Hong, Shangjr Gwo

*Corresponding author for this work

研究成果: Conference contribution

摘要

Significant THz power enhancement and polarity reversal were observed from Mg-doped InN. The carrier concentration-dependent THz polarity reversal reflects the interplay between the surface-electric-field and the photo-Dember field for THz emission from InN:Mg.

原文English
主出版物標題Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference
主出版物子標題2010 Laser Science to Photonic Applications, CLEO/QELS 2010
DOIs
出版狀態Published - 11 十月 2010
事件Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010 - San Jose, CA, United States
持續時間: 16 五月 201021 五月 2010

出版系列

名字Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010

Conference

ConferenceLasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010
國家United States
城市San Jose, CA
期間16/05/1021/05/10

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