In this study, we have systematically investigated the thermal stability of strained silicon-germanium (SiGe) and bulk Si p-metal-oxide-semiconductor field-effect transistors (MOSFETs) in dynamic-threshold (DT) mode and standard mode operation, respectively, from 77 to 400 K. Possessing advantages of good carrier confinement and higher carrier mobility in the strained-SiGe material, SiGe DT-MOSFETs exhibit not only enhanced drive current but also better thermal stability for threshold voltage, substrate sensitivity, and low-frequency noise over the entire operating temperature range than their counterpart Si devices. That is very important for radio-frequency micropower analogue and digital integrated circuits applications.
|頁（從 - 到）||8453-8455|
|期刊||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版狀態||Published - 8 十二月 2005|