Temperature stability of dynamic-threshold mode SiGe p-metal-oxide- semiconductor field effect transistors

Wei Ming Liao, Pei-Wen Li*

*Corresponding author for this work

研究成果: Article同行評審

摘要

In this study, we have systematically investigated the thermal stability of strained silicon-germanium (SiGe) and bulk Si p-metal-oxide-semiconductor field-effect transistors (MOSFETs) in dynamic-threshold (DT) mode and standard mode operation, respectively, from 77 to 400 K. Possessing advantages of good carrier confinement and higher carrier mobility in the strained-SiGe material, SiGe DT-MOSFETs exhibit not only enhanced drive current but also better thermal stability for threshold voltage, substrate sensitivity, and low-frequency noise over the entire operating temperature range than their counterpart Si devices. That is very important for radio-frequency micropower analogue and digital integrated circuits applications.

原文English
頁(從 - 到)8453-8455
頁數3
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
44
發行號12
DOIs
出版狀態Published - 8 十二月 2005

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