Temperature dependent integrity of Sr0.8Bi2Ta2O9 films on ultra-thin Al2O3 buffered Si

Bang Chiang Lan, San-Yuan Chen*, Hsin Yi Lee

*Corresponding author for this work

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)


The annealing temperature dependent integrity of Sr0.8Bi2Ta2O9 (SBT) on ultra-thin 4 nm SiO2 and Al2O3 buffered Si was investigated in this work. Although the capacitance-voltage characteristics show hysteresis loops in both cases, the memory window of Sr0.8Bi2Ta2O9/Al2O3 capacitor is larger than that of Sr0.8Bi2Ta2O9/SiO2 capacitor. As increasing annealing temperature from 800 to 900°C, the grain size and memory window of polycrystalline SBT increase both cases. At 800°C, the leakage current density of Sr0.8Bi2Ta2O9/Al2O3 capacitor is 3.2×10-8 A/cm2 at -3 V, which is low enough for deep sub-μm application. With increasing temperature to 900°C, the leakage current in both structures becomes smaller.

頁(從 - 到)325-328
期刊Materials Chemistry and Physics
出版狀態Published - 29 四月 2003

指紋 深入研究「Temperature dependent integrity of Sr<sub>0.8</sub>Bi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> films on ultra-thin Al<sub>2</sub>O<sub>3</sub> buffered Si」主題。共同形成了獨特的指紋。