Temperature dependent integrity of Sr0.8Bi2Ta2O9 films on ultra-thin Al2O3 buffered Si

Bang Chiang Lan, San-Yuan Chen*, Hsin Yi Lee

*Corresponding author for this work

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

The annealing temperature dependent integrity of Sr0.8Bi2Ta2O9 (SBT) on ultra-thin 4 nm SiO2 and Al2O3 buffered Si was investigated in this work. Although the capacitance-voltage characteristics show hysteresis loops in both cases, the memory window of Sr0.8Bi2Ta2O9/Al2O3 capacitor is larger than that of Sr0.8Bi2Ta2O9/SiO2 capacitor. As increasing annealing temperature from 800 to 900°C, the grain size and memory window of polycrystalline SBT increase both cases. At 800°C, the leakage current density of Sr0.8Bi2Ta2O9/Al2O3 capacitor is 3.2×10-8 A/cm2 at -3 V, which is low enough for deep sub-μm application. With increasing temperature to 900°C, the leakage current in both structures becomes smaller.

原文English
頁(從 - 到)325-328
頁數4
期刊Materials Chemistry and Physics
80
發行號1
DOIs
出版狀態Published - 29 四月 2003

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