Temperature dependences of RF small-signal characteristics for the SOI dynamic threshold voltage MOSFET

Sheng Chun Wang*, Pin Su, Kun Ming Chen, Sheng Yi Huang, Cheng Chou Hung, Guo Wei Huang

*Corresponding author for this work

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

In this paper, the temperature dependences of RF small-signal characteristics for the SOI dynamic threshold voltage (DT) MOSFET (-25 to 125°C) are examined under different bias points. The temperature effects on the intrinsic small-signal parameters and body-related parasitics are also investigated. Moreover, along with our proposed expressions for the cut-off and maximum oscillation frequencies (ft and fmax), the impact of these intrinsic parameters and parasitics on the temperature behaviors of the DT MOSFET's RF performance can be well captured and described.

原文English
主出版物標題European Microwave Week 2009, EuMW 2009
主出版物子標題Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009
頁面69-72
頁數4
出版狀態Published - 28 十二月 2009
事件European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies - 4th European Microwave Integrated Circuits Conference, EuMIC 2009 - Rome, Italy
持續時間: 28 九月 20092 十月 2009

出版系列

名字European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009

Conference

ConferenceEuropean Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies - 4th European Microwave Integrated Circuits Conference, EuMIC 2009
國家Italy
城市Rome
期間28/09/092/10/09

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