Temperature dependence of semiconducting and structural properties of Cr-Si thin films

F. Nava*, T. Tien, King-Ning Tu

*Corresponding author for this work

研究成果: Article同行評審

69 引文 斯高帕斯(Scopus)

摘要

Electrical and structural properties of coevaporated Cr-Si thin alloy films and bilayer Cr/Si films as a function of annealing temperature from 10 to 1000°K have been studied by in situ electrical resistivity and Hall measurements, and structural analysis including MeV 4He+ ion backscattering, x-ray diffraction, Auger electron spectroscopy combined with Ar sputtering, electron microprobe, and scanning and transmission electron microscopy. In the as-deposited state, the coevaporated alloy film was amorphous. Upon annealing, a sharp increase in resistivity occurred near 270°C and the increase has been determined to be amorphous to crystalline CrSi2 phase transformation. The resistivity increased further with annealing up to 550°C then a gradual decrease took place beyond 600°C. In cooling, the resistivity increased monotonically with decreasing temperature. For the bilayer Cr/Si films, the annealing behavior is similar except the sharp increase in resistivity occurred around 450°C due to the formation of CrSi2. The crystalline CrSi2 has been determined to be a semiconductor with an energy gap of 0.27 eV. It is p-type, having a hole concentration of 4×1019 cm-3 at room temperature and a hole mobility of 7.2×104×T (temp)-3/2 cm2/V sec in the acoustic scattering region. The kinetics of amorphous-to-crystalline transformation of Cr-Si alloy film in the temperature range of 225-25°C has been determined to follow a t7 (time) dependence with an apparent activation energy of 1.13 eV.

原文English
頁(從 - 到)2018-2025
頁數8
期刊Journal of Applied Physics
57
發行號6
DOIs
出版狀態Published - 1 十二月 1985

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