Temperature dependence of high frequency noise behaviors for RF MOSFETs

Sheng Chun Wang*, Pin Su, Kun Ming Chen, Chien Ting Lin, Victor Liang, Guo Wei Huang

*Corresponding author for this work

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

For the first time, the temperature dependences of radio frequency (RF) metal oxide semiconductor field effect transistors' intrinsic noise currents, including the induced gate noise current (ig), channel noise current (id) and their correlation noise current, are experimentally investigated. The power spectral densities for the induced gate noise current and correlation noise current are found to rise as temperature increases, and decline for the channel noise current. Moreover, by using van der Ziel's noise model, our experimental results show that, besides ambient temperature, the channel conductance is the main factor dominating the RF noise behaviors. Finally, bias dependence results are also presented.

原文English
文章編號4588990
頁(從 - 到)530-533
頁數4
期刊IEEE Microwave and Wireless Components Letters
18
發行號8
DOIs
出版狀態Published - 1 八月 2008

指紋 深入研究「Temperature dependence of high frequency noise behaviors for RF MOSFETs」主題。共同形成了獨特的指紋。

引用此