Temperature coefficients of the open-circuit voltage of p-n junction solar cells

Ching Yuan Wu*, Jenn-Fang Chen

*Corresponding author for this work

研究成果: Article同行評審

13 引文 斯高帕斯(Scopus)

摘要

An analytic expression for the tempoerature coefficient of the open-circuit voltage has been derived in general, which may be applied to different kinds of p-n junction solar cells. Based on the dominance of the saturation dark current density, the simplified expression have also been developed and justified by experimental measurements. It has been shown that the negative temperature coefficient of the open-circuit voltage is decreased with the increasing light level and the interaction between minority carriers and the high-low junction. Hence, the temperature coefficient of the open circuit voltage is good measure for providing a guide to test the effectivness of a high-low junction in a back-surface-field (BSF) solar cell. Moreover, based on the measured temperature coefficient of the open-circuit voltage from the BSF solar cells fabricated on thin epitaxial substrate, a new method for measuring the effective energy-gap narrowing in the highly doped emitter has been proposed and studied. It has shown that the effective energy-gap narrowing measured is in good agreement with the eempirical expression proposed by Slotboom.

原文English
頁(從 - 到)3852-3858
頁數7
期刊Journal of Applied Physics
53
發行號5
DOIs
出版狀態Published - 1 十二月 1982

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