Temperature- and doping-concentration-dependent characteristics of junctionless gate-all-around polycrystalline-silicon thin-film transistors

Chia Tsung Tso, Tung Yu Liu, Fu-Ming Pan, Jeng-Tzong Sheu

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

The temperature effects of both gate-all-around polycrystalline silicon nanowire (GAA poly-Si NW) junctionless (JL) and inversion mode (IM) transistor devices at various temperatures (77-410 K) were investigated. The electrical characteristics of these devices, such as subthreshold swing (SS), threshold voltage (Vth), and drain-induced barrier lowering (DIBL), were also characterized and compared in this study. Moreover, JL devices with different doping concentrations at various temperatures were also discussed. Both Vth and Ion showed significant doping concentration dependences for JL devices with doping concentrations of 1 × 1019 and 5 × 1019cm%3. However, the electrical characteristics of JL devices showed less thermal sensitivity when the doping concentration reached 1020cm%3.

原文English
文章編號04CD14
期刊Japanese Journal of Applied Physics
56
發行號4
DOIs
出版狀態Published - 1 四月 2017

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