Temperature-accelerated dielectric breakdown in ultrathin gate oxides

C. C. Chen*, C. Y. Chang, Chao-Hsin Chien, T. Y. Huang, Horng-Chih Lin, M. S. Liang

*Corresponding author for this work

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

The aggravated temperature acceleration effects on oxide breakdown for oxide thickness range from 8.7 to 2.5 nm were investigated. The accelerated temperature dependence on dielectric breakdown of the scaled oxide may be ascribed to the increasing fraction of the structural transition layer.

原文English
頁(從 - 到)3708-3710
頁數3
期刊Applied Physics Letters
74
發行號24
DOIs
出版狀態Published - 14 六月 1999

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