Surface recombination dependent performance of a nano-scale p-n junction solar cell

Hung Ruei Tseng, Shun Chieh Hsu, Shih Li Lin, Yin Han Chen, Chien-Chung Lin

研究成果: Conference contribution同行評審

2 引文 斯高帕斯(Scopus)

摘要

A nano-scale p-n junction diode is set up for photovoltaic response simulation, and the codes are based on Matlab® environment. The continuity and transport equations for electrons and holes are installed in the program and proper boundary conditions are used. The surface recombination velocity is found to be an influential parameter for the short-circuit current under regular AM1.5 solar excitation. From the simulation, a 35% degradation on Jsc can be expected in the nano-scale device when the surface recombination velocity increases from almost zero to 107 m/s. Meanwhile the reduction of the minority carrier lifetime is not as detrimental as the surface recombination towards the nano-scale photovoltaic device.

原文English
主出版物標題2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
發行者Institute of Electrical and Electronics Engineers Inc.
頁面1106-1109
頁數4
ISBN(電子)9781479943982
DOIs
出版狀態Published - 15 十月 2014
事件40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
持續時間: 8 六月 201413 六月 2014

出版系列

名字2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Conference

Conference40th IEEE Photovoltaic Specialist Conference, PVSC 2014
國家United States
城市Denver
期間8/06/1413/06/14

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