Suppression of the SOI floating-body effects by linked-body device structure

W. Chen*, Y. Taur, D. Sadana, K. A. Jenkins, J. Sun, S. Cohen

*Corresponding author for this work

研究成果: Conference article

23 引文 斯高帕斯(Scopus)

摘要

A novel 'Linked-body' SOI-CMOS device structure is presented. This structure suppresses the unwanted SOI floating-body effects, yet retaining all the speed advantage of SOI devices. It has much better short-channel effect and very low off-state current compared with regular SOI devices for digital applications, and has no 'kink' in the I-V curves for analog applications. Excellent ring oscillator performance, improved breakdown characteristics, and absence of transient drain-current overshoot are demonstrated in linked-body SOI devices.

原文English
頁(從 - 到)92-93
頁數2
期刊Digest of Technical Papers - Symposium on VLSI Technology
DOIs
出版狀態Published - 1996
事件Proceedings of the 1996 Symposium on VLSI Technology - Honolulu, HI, USA
持續時間: 11 六月 199613 六月 1996

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