A novel 'Linked-body' SOI-CMOS device structure is presented. This structure suppresses the unwanted SOI floating-body effects, yet retaining all the speed advantage of SOI devices. It has much better short-channel effect and very low off-state current compared with regular SOI devices for digital applications, and has no 'kink' in the I-V curves for analog applications. Excellent ring oscillator performance, improved breakdown characteristics, and absence of transient drain-current overshoot are demonstrated in linked-body SOI devices.
|頁（從 - 到）||92-93|
|期刊||Digest of Technical Papers - Symposium on VLSI Technology|
|出版狀態||Published - 1996|
|事件||Proceedings of the 1996 Symposium on VLSI Technology - Honolulu, HI, USA|
持續時間: 11 六月 1996 → 13 六月 1996