Suppression of copper diffusion through barrier metal-free hydrogen silsesquioxane dielectrics by NH3 plasma treatment

Kow-Ming Chang, I. Chung Deng, Sy Jer Yeh, Yao Pin Tsai

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

A low dielectric constant material, hydrogen silsesquioxane (FOx-16), can successfully suppress Cu diffusion without barrier metal by using NH3 plasma treatment. After NH3 plasma treatment, the hydrogen silsesquioxane film with lower leakage current and better barrier ability was achieved. This film almost keeps the same dielectric constant after different plasma exposure times. The decrease in leakage current with more exposure time is due to dangling bonds passivated by -H bonds on porous hydrogen silsesquioxane. The better barrier ability is due to a thin nitride film formed on the dielectric.

原文English
頁(從 - 到)634-636
頁數3
期刊Electrochemical and Solid-State Letters
2
發行號12
DOIs
出版狀態Published - 1 十二月 1999

指紋 深入研究「Suppression of copper diffusion through barrier metal-free hydrogen silsesquioxane dielectrics by NH3 plasma treatment」主題。共同形成了獨特的指紋。

引用此