Suppression of boron penetration in P+-Poly-SiGe Gate P-channel metal-oxide-semiconductor field-effect transistor using NH3-Nitrided and N2O-grown gate oxides

Wen Luh Yang, Tien-Sheng Chao*, Kuan Hung Lai

*Corresponding author for this work

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

High-performance p+-poly-SiGe-gate p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) have been fabricated using NH3-nitrided or N2O-grown oxide instead of the conventional O2-grown oxide. It is found that NH 3-nitrided or N2O-grown oxide can suppress boron penetration in the p+-poly-SiGe gate, which improves the integrity of gate dielectrics, resulting in a low flat-band voltage shift, subthreshold swing, and drain-induced barrier lowering.

原文English
頁(從 - 到)7462-7463
頁數2
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
43
發行號11 A
DOIs
出版狀態Published - 1 十一月 2004

指紋 深入研究「Suppression of boron penetration in P<sup>+</sup>-Poly-SiGe Gate P-channel metal-oxide-semiconductor field-effect transistor using NH<sub>3</sub>-Nitrided and N<sub>2</sub>O-grown gate oxides」主題。共同形成了獨特的指紋。

引用此