High-performance p+-poly-SiGe-gate p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) have been fabricated using NH3-nitrided or N2O-grown oxide instead of the conventional O2-grown oxide. It is found that NH 3-nitrided or N2O-grown oxide can suppress boron penetration in the p+-poly-SiGe gate, which improves the integrity of gate dielectrics, resulting in a low flat-band voltage shift, subthreshold swing, and drain-induced barrier lowering.
|頁（從 - 到）||7462-7463|
|期刊||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版狀態||Published - 1 十一月 2004|