Suppressing non-uniform tunneling in InAs/GaSb TFET with dual-metal gate

Ching Yi Hsu*, Chun Yen Chang, Edward Yi Chang, Chen-Ming Hu

*Corresponding author for this work

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

Non-uniformity in electric field causes early onset of tunneling near the edge of InAs/GaSb hetero-junction tunneling field-effect transistors. When a small area, often an edge, of the tunneling junction has a lower turn-on voltage, the steep switching characteristic is degraded. Fermi pinning at InAs surface greatly worsen the uniformity. We propose a dual-metal gate structure to address the nonuniformity issue. With proper choice of work functions, the dual-metal gate structure can effectively suppress the early onset of edge tunneling and significantly improve the subthreshold swing.

原文English
文章編號2514060
頁(從 - 到)60-65
頁數6
期刊IEEE Journal of the Electron Devices Society
4
發行號2
DOIs
出版狀態Published - 1 三月 2016

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