Sum-Rule Constraints on the Surface State Conductance of Topological Insulators

K. W. Post, B. C. Chapler, M. K. Liu, J. S. Wu, H. T. Stinson, M. D. Goldflam, A. R. Richardella, J. S. Lee, A. A. Reijnders, K. S. Burch, M. M. Fogler, N. Samarth, D. N. Basov

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19 引文 斯高帕斯(Scopus)

摘要

We report the Drude oscillator strength D and the magnitude of the bulk band gap Eg of the epitaxially grown, topological insulator (Bi,Sb)2Te3. The magnitude of Eg, in conjunction with the model independent f-sum rule, allows us to establish an upper bound for the magnitude of D expected in a typical Dirac-like system composed of linear bands. The experimentally observed D is found to be at or below this theoretical upper bound, demonstrating the effectiveness of alloying in eliminating bulk charge carriers. Moreover, direct comparison of the measured D to magnetoresistance measurements of the same sample supports assignment of the observed low-energy conduction to topological surface states.

原文English
文章編號116804
期刊Physical Review Letters
115
發行號11
DOIs
出版狀態Published - 11 九月 2015

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