Study on GaN epilayer transferring to Cu substrate from sapphire substrate using Ga 2O 3 sacrificial layer

Ray-Hua Horng*, D. S. Wuu, S. L. Ou, H. H. Hsueh

*Corresponding author for this work

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

GaN epilayer can be grown on sapphire substrate with a Ga 2O 3 sacrificial layer. It was employed for the epilayer transferring from sapphire substrate to Cu substrate using the chemical lift-off process application. The (-201) oriented β-Ga 2O 3 thin film was first deposited on the c-plane sapphire substrate, followed by the GaN growth via metalorganic vapor phase epitaxy under N 2 and H 2 environment in sequence. The crystal quality of GaN epilayer can be improved dramatically with the regrowth in a H 2 ambient. A GaN epilayer with an electroplated copper substrate was demonstrated using a chemical lift-off process where the Ga 2O 3 sacrificial layer can be laterally etched out with a hydrofluoric solution. It is worthy to mention that the separated sapphire substrate can be cleaned and reused for LED epitaxial growth next time. It is benefiting the cost down for the LED fabrication and Green Photonics Development.

原文English
主出版物標題Light-Emitting Diodes
主出版物子標題Materials, Devices, and Applications for Solid State Lighting XVI
DOIs
出版狀態Published - 5 三月 2012
事件Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI - San Francisco, CA, United States
持續時間: 24 一月 201226 一月 2012

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
8278
ISSN(列印)0277-786X

Conference

ConferenceLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI
國家United States
城市San Francisco, CA
期間24/01/1226/01/12

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