Study of Ti/W/Cu, Ti/Co/Cu, and Ti/Mo/Cu multilayer structures as schottky metals for GaAs diodes

H. C. Chang*, C. S. Lee, S. H. Chen, Edward Yi Chang, J. Z. He

*Corresponding author for this work

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

Schottky structures with copper and refractory metals as diffusion barrier for GaAs Schottky diodes were evaluated. These structures have lower series resistances than the conventionally used Ti/Pt/Au structure. Based on the electrical and material characteristics, the Ti/W/Cu and Ti/Mo/Cu Schottky structures are thermally stable up to 400°C; the Ti/Co/Cu Schottky structure is thermally stable up to 300°C. Overall, the copper-metallized Schottky structures have excellent electrical characteristics and thermal stability, and can be used as the Schottky metals for GaAs devices.

原文English
期刊Journal of Electronic Materials
33
發行號7
DOIs
出版狀態Published - 1 一月 2004

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