Study of Ti/W/Cu, Ti/Co/Cu, and Ti/Mo/Cu multilayer structures as schottky metals for GaAs diodes

H. C. Chang; C. S. Lee; S. H. Chen; Edward Yi Chang; J. Z. He

doi:10.1007/s11664-004-0251-2

Study of Ti/W/Cu, Ti/Co/Cu, and Ti/Mo/Cu multilayer structures as schottky metals for GaAs diodes

H. C. Chang^*, C. S. Lee, S. H. Chen, Edward Yi Chang, J. Z. He

^*Corresponding author for this work

材料科學與工程學系

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

摘要

Schottky structures with copper and refractory metals as diffusion barrier for GaAs Schottky diodes were evaluated. These structures have lower series resistances than the conventionally used Ti/Pt/Au structure. Based on the electrical and material characteristics, the Ti/W/Cu and Ti/Mo/Cu Schottky structures are thermally stable up to 400°C; the Ti/Co/Cu Schottky structure is thermally stable up to 300°C. Overall, the copper-metallized Schottky structures have excellent electrical characteristics and thermal stability, and can be used as the Schottky metals for GaAs devices.

原文	English
期刊	Journal of Electronic Materials
卷	33
發行號	7
DOIs	https://doi.org/10.1007/s11664-004-0251-2
出版狀態	Published - 1 一月 2004

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10.1007/s11664-004-0251-2

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title = "Study of Ti/W/Cu, Ti/Co/Cu, and Ti/Mo/Cu multilayer structures as schottky metals for GaAs diodes",

abstract = "Schottky structures with copper and refractory metals as diffusion barrier for GaAs Schottky diodes were evaluated. These structures have lower series resistances than the conventionally used Ti/Pt/Au structure. Based on the electrical and material characteristics, the Ti/W/Cu and Ti/Mo/Cu Schottky structures are thermally stable up to 400°C; the Ti/Co/Cu Schottky structure is thermally stable up to 300°C. Overall, the copper-metallized Schottky structures have excellent electrical characteristics and thermal stability, and can be used as the Schottky metals for GaAs devices.",

keywords = "Diffusion barrier, GaAs, Schottky",

author = "Chang, {H. C.} and Lee, {C. S.} and Chen, {S. H.} and Chang, {Edward Yi} and He, {J. Z.}",

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T1 - Study of Ti/W/Cu, Ti/Co/Cu, and Ti/Mo/Cu multilayer structures as schottky metals for GaAs diodes

AU - Chang, H. C.

AU - Lee, C. S.

AU - Chen, S. H.

AU - Chang, Edward Yi

AU - He, J. Z.

PY - 2004/1/1

Y1 - 2004/1/1

N2 - Schottky structures with copper and refractory metals as diffusion barrier for GaAs Schottky diodes were evaluated. These structures have lower series resistances than the conventionally used Ti/Pt/Au structure. Based on the electrical and material characteristics, the Ti/W/Cu and Ti/Mo/Cu Schottky structures are thermally stable up to 400°C; the Ti/Co/Cu Schottky structure is thermally stable up to 300°C. Overall, the copper-metallized Schottky structures have excellent electrical characteristics and thermal stability, and can be used as the Schottky metals for GaAs devices.

AB - Schottky structures with copper and refractory metals as diffusion barrier for GaAs Schottky diodes were evaluated. These structures have lower series resistances than the conventionally used Ti/Pt/Au structure. Based on the electrical and material characteristics, the Ti/W/Cu and Ti/Mo/Cu Schottky structures are thermally stable up to 400°C; the Ti/Co/Cu Schottky structure is thermally stable up to 300°C. Overall, the copper-metallized Schottky structures have excellent electrical characteristics and thermal stability, and can be used as the Schottky metals for GaAs devices.

KW - Diffusion barrier

KW - GaAs

KW - Schottky

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VL - 33

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

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