Study of the erase mechanism of MANOS (Metal/Al2O3/ SiN/SiO2/Si) device

Sheng Chin Lai*, Hang Ting Lue, Jong Yu Hsieh, Ming Jui Yang, Yan Kai Chiou, Chia Wei Wu, Tai Bor Wu, Guang Li Luo, Chao-Hsin Chien, Erh Kun Lai, Kuang Yeu Hsieh, Rich Liu, Chih Yuan Lu

*Corresponding author for this work

研究成果: Article

17 引文 斯高帕斯(Scopus)

摘要

The erase characteristics and mechanism of Al2O3 -nitride-oxide-silicon (MANOS) devices are extensively studied. We use transient analysis to transform the erase curve (VFB-time) into a J-E curve (J = transient current, E = field in the tunnel oxide) in order to understand the underlying physics. The measured erase current of MANOS is three orders of magnitude higher than that can be theoretically provided by substrate hole current. In addition, the erase current is very sensitive to the Al2O3 processing condition-also inconsistent with substrate hole injection model. Thus, we propose that MANOS erase occurs through an electron detrapping mechanism. We have further carried out a refill test and its results support the detrapping model. Our results suggest that the interfacial layer between Al2O3 and nitride is a key process that dominates the erase mechanism of MANOS.

原文English
頁(從 - 到)643-645
頁數3
期刊IEEE Electron Device Letters
28
發行號7
DOIs
出版狀態Published - 1 七月 2007

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