Study of Schottky barriers on n-type GaN grown by low-pressure metalorganic chemical vapor deposition

J. D. Guo*, M. S. Feng, R. J. Guo, Fu-Ming Pan, C. Y. Chang

*Corresponding author for this work

研究成果: Article

129 引文 斯高帕斯(Scopus)

摘要

Schottky barriers on n-type GaN films grown by low-pressure metalorganic chemical vapor deposition are characterized and derived. A thin Pt or a Pd layer is deposited by electron-gun evaporation to form Schottky contacts in a vacuum below 1×10-6 Torr. The Schottky barrier heights of Pt on the n-GaN film are determined to be 1.04 and 1.03 eV by current-voltage (C-V) and current density-temperature (J-T) measurements, respectively. Also based on C-V and J-T measurements, the measured barrier height of Pd on n-GaN is 0.94 and 0.91 eV, respectively. Schottky characteristics of Pt and Pd observed in the experiment are compared with those of Au and Ti in previous reports.

原文English
頁數1
期刊Applied Physics Letters
67
DOIs
出版狀態Published - 1 一月 1995

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