Study of InGaN self-assembled quantum dots with interruption growth by metal organic chemical vapor deposition

H. H. Yao*, G. S. Huang, C. Y. Chen, W. D. Liang, Hao-Chung Kuo, S. C. Wang

*Corresponding author for this work

研究成果: Conference contribution同行評審

摘要

Self-assembled InGaN/GaN quantum dots (QDs) with different interruption time were grown by MOCVD system. The peak emission energy of PL spectra exhibits a blue shift as the interruption time increases.

原文English
主出版物標題International Quantum Electronics Conference 2005
頁面139-140
頁數2
DOIs
出版狀態Published - 1 十二月 2005

出版系列

名字IQEC, International Quantum Electronics Conference Proceedings
2005

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