Study of current drive in deep sub-micrometer SOI PMOSFET's

Fariborz Assaderaghi, Kelvin Hui, Stephen Parke, Jon Duster, Ping K. Ko, Chen-Ming Hu

研究成果: Conference contribution同行評審

摘要

Sub-quarter micrometer PMOSFET's are fabricated on SOI films, exhibiting excellent short channel behavior, low sourcedrain resistance, and remarkably large current drive and transconductance. For Tox=5.5nm, saturation transconductances of 270mS/mm at 300K and 350mS/mm at 80K are achieved, which are the highest reported values for this oxide thickness. Direct measurements and simulation results show that the improved current drive is due to low series resistance, forward bias body effect, and the reduction of body charge effect.

原文English
主出版物標題1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993 - Proceedings of Technical Papers
發行者Institute of Electrical and Electronics Engineers Inc.
頁面232-236
頁數5
ISBN(電子)0780309782
DOIs
出版狀態Published - 1 一月 1993
事件1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993 - Taipei, Taiwan
持續時間: 12 五月 199314 五月 1993

出版系列

名字International Symposium on VLSI Technology, Systems, and Applications, Proceedings
ISSN(列印)1930-8868

Conference

Conference1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993
國家Taiwan
城市Taipei
期間12/05/9314/05/93

指紋 深入研究「Study of current drive in deep sub-micrometer SOI PMOSFET's」主題。共同形成了獨特的指紋。

引用此