TY - GEN
T1 - Study of current drive in deep sub-micrometer SOI PMOSFET's
AU - Assaderaghi, Fariborz
AU - Hui, Kelvin
AU - Parke, Stephen
AU - Duster, Jon
AU - Ko, Ping K.
AU - Hu, Chen-Ming
PY - 1993/1/1
Y1 - 1993/1/1
N2 - Sub-quarter micrometer PMOSFET's are fabricated on SOI films, exhibiting excellent short channel behavior, low sourcedrain resistance, and remarkably large current drive and transconductance. For Tox=5.5nm, saturation transconductances of 270mS/mm at 300K and 350mS/mm at 80K are achieved, which are the highest reported values for this oxide thickness. Direct measurements and simulation results show that the improved current drive is due to low series resistance, forward bias body effect, and the reduction of body charge effect.
AB - Sub-quarter micrometer PMOSFET's are fabricated on SOI films, exhibiting excellent short channel behavior, low sourcedrain resistance, and remarkably large current drive and transconductance. For Tox=5.5nm, saturation transconductances of 270mS/mm at 300K and 350mS/mm at 80K are achieved, which are the highest reported values for this oxide thickness. Direct measurements and simulation results show that the improved current drive is due to low series resistance, forward bias body effect, and the reduction of body charge effect.
UR - http://www.scopus.com/inward/record.url?scp=85063631695&partnerID=8YFLogxK
U2 - 10.1109/VTSA.1993.263599
DO - 10.1109/VTSA.1993.263599
M3 - Conference contribution
AN - SCOPUS:85063631695
T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings
SP - 232
EP - 236
BT - 1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993 - Proceedings of Technical Papers
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 12 May 1993 through 14 May 1993
ER -