Studies of the tunneling currents in the InAs/AlSb/GaSb single-barrier interband tunneling diodes grown on GaAs substrates

Jenn-Fang Chen*, L. Yang, M. C. Wu, S. N.G. Chu, A. Y. Cho

*Corresponding author for this work

研究成果: Article

3 引文 斯高帕斯(Scopus)

摘要

This paper studies the tunneling currents in the single-barrier InAs/AlSb/GaSb interband tunneling structures, with an emphasis on correlating with the bandedge alignment. The WKB approximation combined with the k⋯p two-band model are used to analyze the interband tunneling currents versus the barrier widths to obtain the energy level in the AlSb barrier through which the peak tunneling currents occur. The obtained energy level (0.48 ± 0.1 eV above the valence band maximum of the AlSb) agrees with the valence-band offset between AlSb and GaSb. A good agreement of the measured peak voltages and the C - V data with the predicted values by the theory using a self-consistent Schrödinger-Poisson solver is obtained, with a value of 0.15-0.2 eV for the InAs/GaSb band overlap.

原文English
頁(從 - 到)659-663
頁數5
期刊Journal of Crystal Growth
111
發行號1-4
DOIs
出版狀態Published - 2 五月 1991

指紋 深入研究「Studies of the tunneling currents in the InAs/AlSb/GaSb single-barrier interband tunneling diodes grown on GaAs substrates」主題。共同形成了獨特的指紋。

引用此