Structural and optical properties of Ga(As,N) epilayers grown with continuous and pulsed deposition and nitridization

I. P. Soshnikov*, A. R. Kovsh, V. M. Ustinov, N. V. Kryzhanovskaya, N. N. Ledentsov, D. Bimberg, H. Kirmse, W. Neumann, O. M. Gorbenko, Kuo-Jui Lin, J. Wang, R. S. Shiao, J. Chi

*Corresponding author for this work

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

指紋 深入研究「Structural and optical properties of Ga(As,N) epilayers grown with continuous and pulsed deposition and nitridization」主題。共同形成了獨特的指紋。

Chemical Compounds

Engineering & Materials Science

Physics & Astronomy