Structural and optical properties of Ga(As,N) epilayers grown with continuous and pulsed deposition and nitridization

I. P. Soshnikov*, A. R. Kovsh, V. M. Ustinov, N. V. Kryzhanovskaya, N. N. Ledentsov, D. Bimberg, H. Kirmse, W. Neumann, O. M. Gorbenko, Kuo-Jui Lin, J. Wang, R. S. Shiao, J. Chi

*Corresponding author for this work

研究成果: Article

2 引文 斯高帕斯(Scopus)

摘要

In this work we studied the impact of the growth mode on structural and optical properties of thick GaAsN layers grown on GaAs (100) substrates using plasma-source molecular beam epitaxy. The investigated GaAsN layers had similar average nitrogen content (N ∼ 1.4-1.6%), but were formed using different growth approaches. We found that both structural and optical properties of GaAsN layers crucially depend on the growth mode. We observed the formation of an ultrashort-period monolayer GaAsN-GaAs superlattice upon pulsed GaAsN deposition with laterally modulated nitrogen composition. We attribute this phenomenon to self-organization of nitrogen-rich and nitrogen-poor domains due to phase separation. We demonstrate the possibility of forming short-period GaAsN/GaAs superlattices using multi-cycle GaAsN deposition in order to fabricate high planarity lateral domain structures suitable for fundamental research and practical applications.

原文English
頁(從 - 到)501-504
頁數4
期刊Semiconductor Science and Technology
19
發行號3
DOIs
出版狀態Published - 1 三月 2004

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