Strong luminescence intensities in Al 0.22 Ga 0.78 As grown on misoriented (111)B GaAs

Albert Chin*, T. M. Cheng, S. P. Peng, Ziad Osman, Utpal Das, C. Y. Chang

*Corresponding author for this work

研究成果: Article同行評審

13 引文 斯高帕斯(Scopus)

摘要

Strong enhancement in the luminescence intensity is observed in Al 0.22 Ga 0.78 As epitaxial layers grown on misoriented (111)B GaAs at 630°C. For 3°misorientation, the luminescence intensity is almost 10 times that of (100) layers and the luminescence efficiency is an order of magnitude stronger than that of (100). (100) Al 0.4 Ga 0.6 As/GaAs quantum well laser diode structures grown under identical conditions with a low threshold current density of 150 A/cm 2 are indications of excellent AlGaAs material quality. Electron mobility for 3°misoriented (111) Al 0.25 Ga 0.75 As is about 10% higher than that for side-by-side grown (100). The strong luminescence associated with a large red shift of 90 meV, the 10% mobility enhancement, and wirelike structure shown in transmission electron microscopy are indicative of the natural formation of quantized structures.

原文English
頁(從 - 到)2381-2383
頁數3
期刊Applied Physics Letters
63
發行號17
DOIs
出版狀態Published - 1 十二月 1993

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