Stress-Induced Oxide Leakage

Reza Rofan, Chen-Ming Hu

研究成果: Article同行評審

125 引文 斯高帕斯(Scopus)

摘要

Voltage-stress-induced leakage in S-nm thermal oxides was studied. A correlation between the leakage current and the charge-pumping current was evident in a series of voltage stress, annealing, and restress tests. The close correlation suggests that the leakage may be a result of the oxide-trap-assisted tunneling.

原文English
頁(從 - 到)632-634
頁數3
期刊IEEE Electron Device Letters
12
發行號11
DOIs
出版狀態Published - 1 一月 1991

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