Strain relaxation induced micro-photoluminescence haracteristics of a single InGaN-based nanopillar fabricated by focused ion beam milling

C. H. Chiu, Peichen Yu, J. R. Chen, H. H. Yen, C. C. Kao, Hao-Chung Kuo, Tien-chang Lu, S. C. Wang, Yuh Renn Wu, Han Wei Yang, W. Y. Yeh

研究成果: Conference contribution同行評審

摘要

A free-standing nanopillar with a diameter of 300 nm, and a height of 2 μm is successfully demonstrated by focused ion beam milling. The measured micro-photoluminescence (μ-PL) from the embedded InGaN/GaN multiple quantum wells shows a blue shift of 68 meV in energy with a broadened full-width at half maximum, ∼200meV. Moreover, the power-dependent μ-PL measurement confirms that the strain-relaxed emission region of the nanopillar exhibits a higher radiative recombination rate than that of the asgrown structure, indicating great potential for realizing high-efficiency nano devices in the UV/blue wavelength range.

原文English
主出版物標題ECS Transactions - State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9
頁面139-143
頁數5
版本7
DOIs
出版狀態Published - 1 十二月 2008
事件State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9 - 214th ECS Meeting - Honolulu, HI, United States
持續時間: 12 十月 200817 十月 2008

出版系列

名字ECS Transactions
號碼7
16
ISSN(列印)1938-5862
ISSN(電子)1938-6737

Conference

ConferenceState-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9 - 214th ECS Meeting
國家United States
城市Honolulu, HI
期間12/10/0817/10/08

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