@inproceedings{ce32b49d29ca4b5fb47fa8cd4cb70e23,
title = "Strain relaxation induced micro-photoluminescence haracteristics of a single InGaN-based nanopillar fabricated by focused ion beam milling",
abstract = "A free-standing nanopillar with a diameter of 300 nm, and a height of 2 μm is successfully demonstrated by focused ion beam milling. The measured micro-photoluminescence (μ-PL) from the embedded InGaN/GaN multiple quantum wells shows a blue shift of 68 meV in energy with a broadened full-width at half maximum, ∼200meV. Moreover, the power-dependent μ-PL measurement confirms that the strain-relaxed emission region of the nanopillar exhibits a higher radiative recombination rate than that of the asgrown structure, indicating great potential for realizing high-efficiency nano devices in the UV/blue wavelength range.",
author = "Chiu, {C. H.} and Peichen Yu and Chen, {J. R.} and Yen, {H. H.} and Kao, {C. C.} and Hao-Chung Kuo and Tien-chang Lu and Wang, {S. C.} and Wu, {Yuh Renn} and Yang, {Han Wei} and Yeh, {W. Y.}",
year = "2008",
month = dec,
day = "1",
doi = "10.1149/1.2983169",
language = "English",
isbn = "9781566776530",
series = "ECS Transactions",
number = "7",
pages = "139--143",
booktitle = "ECS Transactions - State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9",
edition = "7",
note = "null ; Conference date: 12-10-2008 Through 17-10-2008",
}