Strain-induced channel backscattering modulation in nanoscale CMOSFETs

Hiuig Wei Chen*, Hong Nien Lin, Chih Hsin Ko, Chung Hu Ge, Horng-Chih Lin, Tiao Yuan Huang, Wen Chin Lee

*Corresponding author for this work

研究成果: Conference contribution同行評審

摘要

The channel backscattering ratios as well as the ballistic efficiency of strained CMOSFETs were studied for both nondegenerate and degenerate-limited cases. We found that the simple nondegenerate assumption can predict strain-induced change of ballistic efficiency with fair accuracy. The mechanism of drain current dependence on strain-induced mobility change was also investigated based on channel backscattering theory.

原文English
主出版物標題2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers
頁面62-63
頁數2
DOIs
出版狀態Published - 1 十二月 2006
事件2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Hsinchu, Taiwan
持續時間: 24 四月 200626 四月 2006

出版系列

名字International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA
國家Taiwan
城市Hsinchu
期間24/04/0626/04/06

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