Statistical variation of NMOSFET hot-carrier lifetime and its impact on digital circuit reliability

Jone F. Chen*, Bruce W. McGaughy, Chen-Ming Hu

*Corresponding author for this work

研究成果: Conference article同行評審

3 引文 斯高帕斯(Scopus)

摘要

The statistical variation of NMOSFET hot-carrier lifetime is studied. The variation in lifetime among spatially separate dies is more significant than the variation within each die. Due to the statistical nature of device hot-carrier lifetime, hot-carrier induced circuit delay degradation in critical paths is a statistical distribution rather than a deterministic parameter. A statistical hot-carrier simulator has been developed to predict the impact that statistical variation of device hot-carrier lifetime has on circuit reliability.

原文English
頁(從 - 到)29-32
頁數4
期刊Technical Digest - International Electron Devices Meeting
DOIs
出版狀態Published - 1 十二月 1995
事件Proceedings of the 1995 International Electron Devices Meeting, IEDM'95 - Washington, DC, USA
持續時間: 10 十二月 199513 十二月 1995

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