The statistical variation of NMOSFET hot-carrier lifetime is studied. The variation in lifetime among spatially separate dies is more significant than the variation within each die. Due to the statistical nature of device hot-carrier lifetime, hot-carrier induced circuit delay degradation in critical paths is a statistical distribution rather than a deterministic parameter. A statistical hot-carrier simulator has been developed to predict the impact that statistical variation of device hot-carrier lifetime has on circuit reliability.
|頁（從 - 到）||29-32|
|期刊||Technical Digest - International Electron Devices Meeting|
|出版狀態||Published - 1 十二月 1995|
|事件||Proceedings of the 1995 International Electron Devices Meeting, IEDM'95 - Washington, DC, USA|
持續時間: 10 十二月 1995 → 13 十二月 1995