Statistical variation of NMOSFET hot-carrier lifetime and its impact on digital circuit reliability

Jone F. Chen; Bruce W. McGaughy; Chen-Ming Hu

doi:10.1109/IEDM.1995.497175

Statistical variation of NMOSFET hot-carrier lifetime and its impact on digital circuit reliability

Jone F. Chen^*, Bruce W. McGaughy, Chen-Ming Hu

^*Corresponding author for this work

國際半導體產業學院

研究成果: Conference article › 同行評審

3 引文斯高帕斯（Scopus）

摘要

The statistical variation of NMOSFET hot-carrier lifetime is studied. The variation in lifetime among spatially separate dies is more significant than the variation within each die. Due to the statistical nature of device hot-carrier lifetime, hot-carrier induced circuit delay degradation in critical paths is a statistical distribution rather than a deterministic parameter. A statistical hot-carrier simulator has been developed to predict the impact that statistical variation of device hot-carrier lifetime has on circuit reliability.

原文	English
頁（從 - 到）	29-32
頁數	4
期刊	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.1995.497175
出版狀態	Published - 1 十二月 1995
事件	Proceedings of the 1995 International Electron Devices Meeting, IEDM'95 - Washington, DC, USA 持續時間: 10 十二月 1995 → 13 十二月 1995

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10.1109/IEDM.1995.497175

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引用此

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abstract = "The statistical variation of NMOSFET hot-carrier lifetime is studied. The variation in lifetime among spatially separate dies is more significant than the variation within each die. Due to the statistical nature of device hot-carrier lifetime, hot-carrier induced circuit delay degradation in critical paths is a statistical distribution rather than a deterministic parameter. A statistical hot-carrier simulator has been developed to predict the impact that statistical variation of device hot-carrier lifetime has on circuit reliability.",

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