Statistical study of RRAM MLC SET variability induced by filament morphology

Chung Wei Hsu, Xin Zheng, Yi Wu, Tuo-Hung Hou, H. S.Philip Wong

研究成果: Conference contribution同行評審

2 引文 斯高帕斯(Scopus)

摘要

This paper establishes the correlation between RRAM multilevel-cell (MLC) stochastic SET variability and random telegraph noise (RTN). We show that a smaller diameter (dD) of locally connecting/rupturing conductive filament (CF) and larger distance of gap (d G ) between CF and electrode demonstrate both steeper Weibull slope β with a relaxed SET-disturb margin by 0.4 V and 36x improvement in RTN robustness. This is achieved by lower current compliances (I coMp ) of 100 μ and larger RESET stopping voltage (V reset ) of-4.5 V for smaller d D and larger do with leaving less residual oxygen vacancies (Vo +2 ) in the gap region. Results from the Kinetic Monte Carlo (KMC) modeling also support these findings.

原文English
主出版物標題2017 International Reliability Physics Symposium, IRPS 2017
發行者Institute of Electrical and Electronics Engineers Inc.
頁面5A3.1-5A3.5
頁數5
ISBN(電子)9781509066407
DOIs
出版狀態Published - 30 五月 2017
事件2017 International Reliability Physics Symposium, IRPS 2017 - Monterey, United States
持續時間: 2 四月 20176 四月 2017

出版系列

名字IEEE International Reliability Physics Symposium Proceedings
ISSN(列印)1541-7026

Conference

Conference2017 International Reliability Physics Symposium, IRPS 2017
國家United States
城市Monterey
期間2/04/176/04/17

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