Statistical device simulation of physical and electrical characteristic fluctuations in 16-nm-gate high-κ/metal gate MOSFETs in the presence of random discrete dopants and random interface traps

Yiming Li*, Hui Wen Cheng

*Corresponding author for this work

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

指紋 深入研究「Statistical device simulation of physical and electrical characteristic fluctuations in 16-nm-gate high-κ/metal gate MOSFETs in the presence of random discrete dopants and random interface traps」主題。共同形成了獨特的指紋。

Chemical Compounds

Physics & Astronomy

Engineering & Materials Science