Statistical analysis of metal gate workfunction variability, process variation, and random dopant fluctuation in nano-CMOS circuits

Chih Hong Hwang*, Tien Yeh Li, Ming Hung Han, Kuo Fu Lee, Hui Wen Cheng, Yiming Li

*Corresponding author for this work

研究成果: Conference contribution同行評審

7 引文 斯高帕斯(Scopus)

摘要

This work for the first time estimates the influences of the intrinsic parameter fluctuations consisting of metal gate workfunction fluctuation (WKF), process variation effect (PVE) and random dopant fluctuation (RDF) on 16-nm-gate planar metal-oxide-semiconductor field effect transistors (MOSFETs) and circuits. The WKF and RDF dominate the threshold voltage fluctuation; however, the WKF brings less impact on the gate capacitance due to the screening effect of the inversion layer. The fluctuation of timing characteristics depends on the threshold voltage fluctuation, and therefore is proportional to the trend of threshold voltage fluctuation. For an amplifier circuit, the high-frequency characteristics, the circuit gain, the 3dB bandwidth, the unity-gain bandwidth power, and the power-added efficiency, are explored consequently. Similar to the trend of the cutoff frequency, the PVE and RDF dominate both the device and circuits characteristic fluctuations due to the significant gate capacitance fluctuations and the WKF is less important at this simulation scenario. The extensive study assesses the fluctuations on circuit performance and reliability, which can in turn be used to optimize nanoscale MOSFET and circuits.

原文English
主出版物標題SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices
DOIs
出版狀態Published - 2009
事件SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices - San Diego, CA, United States
持續時間: 9 九月 200911 九月 2009

出版系列

名字International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

ConferenceSISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices
國家United States
城市San Diego, CA
期間9/09/0911/09/09

指紋 深入研究「Statistical analysis of metal gate workfunction variability, process variation, and random dopant fluctuation in nano-CMOS circuits」主題。共同形成了獨特的指紋。

引用此