Stable temperature characteristics and suppression of efficiency droop in InGaN green light-emitting diodes using pre-TMIn flow treatment

Ya Ju Lee*, Yi Ching Chen, Chia Jung Lee, Chun Mao Cheng, Shih Wei Chen, Tien-chang Lu

*Corresponding author for this work

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

We present experimental results on the improved performance and high stable temperature characteristics of the InGaN green light-emitting diode (LED) with pre-trimethlyindium (pre-TMIn) flow treatment. By using pre-TMIn flow treatment, a relatively large radiative coefficient (B = 3.34 × 10-11 cm3 · s-1) corresponding to a 9.2% enhancement in the internal quantum efficiency, as well as a significant reduction of leakage paths for injected carriers, was obtained. Most important, the pre-TMIn flow treatment evidently reduces the dependence of the external quantum efficiency on temperature and efficiency droop of green LEDs. The improvement is thought to be attributable to the preferential formation of In-rich dots upon pre-TMIn flow treatment, which effectively suppresses the trapping of excitons by threading dislocations and the overflowing of injected carriers outside the active regions at elevated temperatures.

原文English
文章編號5491070
頁(從 - 到)1279-1281
頁數3
期刊IEEE Photonics Technology Letters
22
發行號17
DOIs
出版狀態Published - 1 九月 2010

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