Stabilizing dielectric constant of fluorine-doped SiO2 film by N2O and NH3 plasma post-treatment

Y. J. Mei, T. C. Chang*, S. J. Chang, Fu-Ming Pan, M. S.K. Chen, A. Tuan, S. Chou, C. Y. Chang

*Corresponding author for this work

研究成果: Article同行評審

13 引文 斯高帕斯(Scopus)

摘要

Fluorine doped oxide (SiO2-XFX) films have been found to exhibit a low dielectric constant. However, the critical issue about SiO2-XFX is its low resistance to moisture which causes the dielectric constant of the film to increase with time. In this work, N2O and NH3 plasma post-treatments are applied to as-deposited SiO2-XFX films. It has been observed that NH3 plasma post-treatments of SiO2-XFX are quite efficient at blocking moisture. The dielectric constant and stress values of the SiO2-XFX films after the N2O and NH3 plasma post-treatments are very stable. The disadvantage of N2O plasma post-treatment is that the dielectric constant of the SiO2-XFX film increases from 3.21 to 3.6 due to fluorine desorption from the SiO2-XFX network. On the other hand, NH3 plasma post-treatment is more efficient at blocking moisture and keeping the low dielectric constant unchanged due to surface nitridation of the SiO2-XFX film.

原文English
頁(從 - 到)501-506
頁數6
期刊Thin Solid Films
308-309
發行號1-4
DOIs
出版狀態Published - 31 十月 1997

指紋 深入研究「Stabilizing dielectric constant of fluorine-doped SiO<sub>2</sub> film by N<sub>2</sub>O and NH<sub>3</sub> plasma post-treatment」主題。共同形成了獨特的指紋。

引用此